Karl Ludwig, G. Ozaydin, Y. Wang, N. Bouet, L. Colakerol, and A. Ozcan
Dept of Physics
Boston University
Abstract:
Understanding the kinetics of surface and thin film growth processes is a topic of considerable interest from both fundamental and applied viewpoints. We have constructed a facility for the time-resolved x-ray study of such processes at beamline X21 of the National Synchrotron Light Source. I will discuss recent results in two broad areas: growth of wide-bandgap group III-nitride semiconductors by plasma assisted molecular beam epitaxy (PA-MBE) and surface modification of Si by ion bombardment. The group III-nitride experiments have examined migration-enhanced epitaxy, the early stage kinetics of sapphire surface nitridation, and Ga droplet formation with subsequent nitridation to form GaN nanodots. Studies of Si surface evolution during Ar+ ion bombardment have focused on understanding spontaneous nanopatterning and smoothening of surfaces during the sputter erosion process. Often the real-time x-ray experiments allow detailed comparisons with theory that are difficult or impossible to perform with other methods.
2009 Run
Sept. 23rd to Nov. 10th
