Andrei Sirenko
New Jersey Institute of Technology, Newark, NJ
Abstract:
We present microbeam high-resolution x-ray diffraction (HRXRD) and
micro-Photoluminescence (PL) analysis of the InGaAsP- and InGaAlAs-based MQW
ridge-waveguides for monolithically integrated optoelectronic devices.
Potentials of these two quaternary materials for high-density integration
will be described and importance of the microbeam HRXRD technique will be
highlighted.
Waveguide arrays have been produced by the MOVPE technique in the Selective
Area Growth (SAG) regime with the waveguide width varied from 1 to 60 mm.
Synchrotron Radiation-based HRXRD measurements with the angular resolution
of 3 arcsec were carried out at CHESS (beamsize of 10 mm) and APS (beamsize
of 0.3 mm). Strain, thickness, and composition variation in the active
region of the ridge waveguides have been measured and compared for the
regimes of the selective growth controlled by the gas-phase diffusion and
surface migration of the metal-organic precursors from the masked regions.
Strong contribution of the surface migration from the oxide mask into the
SAG growth process has been observed for InGaAsP-based waveguides with the
width < 10 mm. Strain-induced relaxation effects in the active regions have
been studied using micro-beam reciprocal space mapping analysis. In
conclusion we will discuss future plans on microbeam HRXRD characterization
of nitride-based and Si-Ge based nanostructures.
This work is carried out in collaboration with A. Kazimirov, R. Huang, and
D. H. Bilderback (Cornell High Energy Synchrotron Source, CU), S. O’Malley
(New Jersey Institute of Technology), Z.-H. Cai and B. Lai (Advanced Photon
Source, Argonne National Laboratory), and A. Ougazzaden (Université de Metz,
Supelec, France)
2008 Run
Nov 19th - Dec 22nd
